Towards identification of localized donor states in InN

Semiconductor Science and Technology

Volumn 22, Issue 10, 2007, Pages 1161-1164

  Plesiewicz, J ^a   Suski, T ^a   Dmowski, L ^a   Walukiewicz, W ^b   Yu, K M ^b   Korman, A ^c   Ratajczak, R ^c   Stonert, A ^c   Lu, Hai ^d   Schaff, W ^d  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

^d Cornell University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); ELECTRONS; POINT DEFECTS; PRESSURE EFFECTS; PROTON IRRADIATION;

HALL ELECTRON CONCENTRATION; PRESSURE DEPENDENCE; RESONANT DONOR STATES (RDS);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 34748846345     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/10/014     Document Type: Article

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