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Volumn 86, Issue 26, 2005, Pages 1-3

Resonant localized donor state above the conduction band minimum in InN

(10) Dmowski, L H a Plesiewicz, J A a Suski, T a Lu, Hai b Schaff, W b Kurouchi, M c Nanishi, Y c Konczewicz, L d Cimalla, V e Ambacher, O e

a INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

b School of Operations Research and Industrial Engineering (United States)

c RITSUMEIKAN UNIVERSITY (Japan)

d UNIVERSITÉ MONTPELLIER 2 (France)

e ILMENAU UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; FERMI LEVEL; HALL EFFECT; HIGH ENERGY PHYSICS; MAGNETIC FIELD EFFECTS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES;

CONDUCTION BANDS; ELECTRON CONCENTRATIONS; PRESSURE COEFFICIENTS; RESONANT DONOR LEVEL;

INDIUM COMPOUNDS;

EID: 22144446023 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1977212 Document Type: Article

Times cited : (17)

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