The effect of chlorine doping concentration on the quality of CdTe single crystals grown by the modified physical vapor transport method

Journal of Crystal Growth

Volumn 308, Issue 1, 2007, Pages 63-70

  Popovych, V D ^a   Virt, I S ^a,b   Sizov, F F ^c   Tetyorkin, V V ^c   Parfenjuk, O A ^d   Ilashchuk, M I ^d  

^a DROHOBYCH IVAN FRANKO STATE PEDAGOGICAL UNIVERSITY   (Ukraine)

^b UNIVERSITY OF RZESZÓW   (Poland)

^c Ivasiv) Z F   (Ukraine)

^d CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

Author keywords

A1. Defects; A1. Doping; A2. Growth from vapor; B1. Cadmium compounds

Indexed keywords

DOPING (ADDITIVES); HALL EFFECT; PHYSICAL VAPOR DEPOSITION; PRECIPITATES; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR INSULATOR BOUNDARIES; SINGLE CRYSTALS;

DOPING CONCENTRATION; PHYSICAL VAPOR TRANSPORT; SEMI-INSULATING CRYSTALS; STRUCTURAL QUALITY;

CRYSTAL GROWTH;

EID: 34748829667     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.07.041     Document Type: Article

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