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Volumn 143-144, Issue 1, 2003, Pages 425-429

New approach for high resistivity CdTe preparation

Author keywords

Cadmium telluride; Crystal growth; Electrical resistivity; Stoichiometry controlled

Indexed keywords

ANNEALING; CRYSTAL GROWTH; CRYSTAL IMPURITIES; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; PARTIAL PRESSURE; POLYCRYSTALLINE MATERIALS; STOICHIOMETRY; VAPOR PRESSURE;

EID: 0242440044     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-0136(03)00413-8     Document Type: Conference Paper
Times cited : (5)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.