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Volumn 143-144, Issue 1, 2003, Pages 425-429
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New approach for high resistivity CdTe preparation
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Author keywords
Cadmium telluride; Crystal growth; Electrical resistivity; Stoichiometry controlled
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Indexed keywords
ANNEALING;
CRYSTAL GROWTH;
CRYSTAL IMPURITIES;
DOPING (ADDITIVES);
ELECTRIC CONDUCTIVITY;
PARTIAL PRESSURE;
POLYCRYSTALLINE MATERIALS;
STOICHIOMETRY;
VAPOR PRESSURE;
EFFUSION FLUX;
SEMICONDUCTING CADMIUM TELLURIDE;
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EID: 0242440044
PISSN: 09240136
EISSN: None
Source Type: Journal
DOI: 10.1016/S0924-0136(03)00413-8 Document Type: Conference Paper |
Times cited : (5)
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References (9)
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