A combined SIMS and ICPMS investigation of the origin and distribution of potentially electrically active impurities in CdTe/CdS solar cell structures

Semiconductor Science and Technology

Volumn 20, Issue 5, 2005, Pages 434-442

  Emziane, M ^a   Durose, K ^a   Romeo, N ^b   Bosio, A ^b   Halliday, D P ^a  

^a DURHAM UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; HETEROJUNCTIONS; IMPURITIES; INDUCTIVELY COUPLED PLASMA; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE;

DEPTH PROFILES; INDUCTIVELY COUPLED PLASMA MASS SPECTROMETRY (ICPMS); SOLAR CELL STRUCTURES; STARTING MATERIALS;

CADMIUM SULFIDE SOLAR CELLS;

EID: 24144435934     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/5/019     Document Type: Article

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