Growth of silicon nanowires by nanometer-sized tip manipulation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 9 A, 2007, Pages 5706-5710

  Klzuka, Tokushi ^a,b   Takatani, Yasuhiro ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Electrical property; In situ transmission electron microscopy; Mechanical property; Nanowire; Silicon

Indexed keywords

CURRENT DENSITY; ELECTRIC CONDUCTANCE; GROWTH RATE; MECHANICAL PROPERTIES; NANOCRYSTALLINE SILICON; SCANNING PROBE MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRIC CONDUCTION IN NANOWIRES; NANOMETERSIZED TIPS; SILICON NANOWIRES;

NANOWIRES;

EID: 34548709752     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.5706     Document Type: Article

References (28)

1. A. G. Cullis and L. T. Canham.: Nature (London) 353 (1991) 335.
2. A. J. Read, R. J. Needs, K. J. Nash, L. T. Canham, P. D. J. Calcott, and A. Qteish: Phys. Rev. Lett. 69 (1992) 1232.
3. A. G. Nassiopoulos, S. Grigoropoulos, and D. Papadimitriou: Appl. Phys. Lett. 69 (1996) 2267.
4. T. Makimura, Y. Kunii, and K. Murakami: Jpn. J. Appl. Phys. 35 (1996) 4780.
5. Z. A. K. Durrani, T. Kamiya, Y. T. Tan, H. Ahmed, and N. Lloyd: Microelectron. Eng. 63 (2002) 267.
6. J. Westwater, D. P. Gosain, S. Tomiya, S. Usui, and H. Ruda: J. Vac. Sci. Technol. B 15 (1997) 554.
7. A. M. Morales and C. M. Lieber: Science 279 (1998) 208.
8. N. Ozaki, Y. Ohno, and S. Takeda: Appl. Phys. Lett. 73 (1998) 3700.
9. D. D. Ma, C. S. Lee, F. C. K. Au, S. Y. Tong, and S. T. Lee: Science 299 (2003) 1874.
10. Y. F. Zhang, Y. H. Tang, N. Wang, D. P. Yu, C. S. Lee, I. Bello, and S. T. Lee: Appl. Phys. Lett. 72 (1998) 1835.
11. G. F. Grom, D. J. Lockwood, J. P. McCaffrey, H. J. Labbé, P. M. Fauchet, B. White, Jr., J. Diener, D. Kovalev, F. Koch, and L. Tsybeskov: Nature (London) 407 (2000) 358.
12. Y. Nakajima, Y. Takahashi, S. Horiguchi, K. Iwadate, H. Namatsu, K. Kurihara, and M. Tabe: Appl. Phys. Lett. 65 (1994) 2833.
13. H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Hiramoto, and T. Ikoma: Appl. Phys. Lett. 68 (1996) 3585.
14. N. Clément, D. Tonneau, H. Dallaporta, V. Bouchiat, D. Fraboulet, D. Mariole, J. Gautier, and V. Safarov: Physica E 13 (2002) 999.
15. R. Hasunuma, T. Komeda, H. Mukaida, and H. Tokumoto: J. Vac. Sci. Technol. B 15 (1997) 1437.
16. A. T. Tilke, F. C. Simmel, H. Lorenz, R. H. Blick, and J. P. Kotthaus: Phys. Rev. B 68 (2003) 75311.
17. S. Heike, T. Hashizume, and Y. Wada: J. Appl. Phys. 80 (1996) 4182.
18. T. Ono, H. Saitoh, and M. Esashi: Appl. Phys. Lett. 70 (1997) 1852.
19. Y. Naitoh, K. Takayanagi, Y. Oshima, and H. Hirayama: J. Electron Microsc. 49 (2000) 211.
20. T. Kizuka, K. Yamada, S. Deguchi, M. Naruse, and N. Tanaka: Phys. Rev. B 55 (1997) R7398.
21. T. Kizuka: Phys. Rev. B 63 (2001) 33309.
22. T. Kizuka, H. Ohmi, T. Sumi, K. Kumazawa, S. Deguchi, M. Naruse, S. Fujisawa, S. Sasaki, A. Yabe, and Y. Enomoto: Jpn. J. Appl. Phys. 40 (2001) L 170.
23. S. F. Hu, W. Z. Wong, S. S. Liu, Y. C. Wu, C. L. Sung, and T. Y. Huang: Solid State Commum. 125 (2003) 351.
24. S. Chung, J. Yu, and J. R. Heath: Appl. Phys. Lett. 76 (2000) 2068.
25. G. A. Sallivan: J. Phys. Chem. Solids 28 (1967) 347.
26. Z. Yang and M. DiVentra: Phys. Rev. B 67 (2003) 161311.
27. U. Gösele, H. Stenzel, T. Martini, J. Steinkirchner, D. Conrad, and K. Scheerschmidt: Appl. Phys. Lett. 67 (1995) 3614.
28. C. J. Muller, J. M. van Ruitenbeek, and L. J. de Longh: Phys. Rev. Lett. 69 (1992) 140.