Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching

Applied Physics Letters

Volumn 91, Issue 10, 2007, Pages

  Kim, T W ^a   Song, J I ^a   Jang, J H ^a   Kim, D H ^b   Park, S D ^c   Bae, J W ^c   Yeom, G Y ^c  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Massachusetts Institute of Technology Cambridge

^c Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITE FILMS; HALL EFFECT; REACTIVE ION ETCHING; SCHOTTKY BARRIER DIODES;

ATOMIC LAYER ETCHING (ALET); DRY GATE RECESS PROCESS; NE-BASED ATOMIC LAYER ETCHING (ALET);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34548480154     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2780113     Document Type: Article

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