Highly selective GaAs/Al0.2Ga0.8As wet etch process for the gate recess of low-voltage-power pseudomorphic high-electron-mobility transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 8, 2000, Pages 4699-4703

  Chang, Huang Choung ^a   Chang, Edward Y ^a   Chung, Chao Cheng ^a   Kuo, C T ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM GALLIUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034244825     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4699     Document Type: Article

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