The state filling effect in p-doped InGaAs/GaAs quantum dots

Journal of Physics Condensed Matter

Volumn 19, Issue 38, 2007, Pages

  Wen, X M ^a,b   Dao, L V ^b   Hannaford, P ^b   Mokkapati, S ^c   Tan, H H ^c   Jagadish, C ^c  

^a YUNNAN UNIVERSITY   (China)

^b SWINBURNE UNIVERSITY OF TECHNOLOGY   (Australia)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

PHONONS; PHOSPHORUS; PHOTOEXCITATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

ELECTRON DYNAMICS; PHOTON ENERGY; SATURATION FACTORS; STATE FILLING EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34548443383     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/19/38/386213     Document Type: Article

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