State filling phenomena in modulation-doped InAs quantum dots

Journal of Crystal Growth

Volumn 271, Issue 3-4, 2004, Pages 385-390

  Park, Young Min ^a,b   Park, Young Ju ^a   Kim, Kwang Moo ^a   Shin, Jae Cheol ^a   Song, Jin Dong ^a   Lee, Jung Il ^a   Yoo, Keon Ho ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

A1. State filling; A3. Molecular beam epitaxy; A3. Quantum dots

Indexed keywords

CAPACITANCE; CONCENTRATION (PROCESS); CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); GROUND STATE; LIGHT MODULATION; PHOTOLUMINESCENCE; SELF ASSEMBLY;

DOPING CONCENTRATIONS; EXCITED STATE EMISSIONS; GROUND STATE TRANSITION; STATE FILLING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 7644236943     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.009     Document Type: Article

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