Recombination properties of Si-doped InGaAs/GaAs quantum dots

Nanotechnology

Volumn 17, Issue 21, 2006, Pages 5373-5377

  Siegert, J ^a   Marcinkeviius, S ^a   Fu, L ^b   Jagadish, C ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); LOW TEMPERATURE EFFECTS; PHOTODETECTORS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

DOT DOPING; QUANTUM DOT INFRARED PHOTODETECTORS (QDIPS); RECOMBINATION PROPERTIES; TIME RESOLVED PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846117095     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/21/015     Document Type: Article

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