-
2
-
-
33751440051
-
Investigation of fully- and partially-depleted self-aligned SiGeC HBTs on thin film SOI
-
G. Avenier, P. Chevalier, B. Vandelle, D. Lenoble, F. Saguin, S. Frégonèse et al., Investigation of fully- and partially-depleted self-aligned SiGeC HBTs on thin film SOI, in: Proc. ESSDERC (2005), pp. 133-136.
-
(2005)
Proc. ESSDERC
, pp. 133-136
-
-
Avenier, G.1
Chevalier, P.2
Vandelle, B.3
Lenoble, D.4
Saguin, F.5
Frégonèse, S.6
-
3
-
-
21644432295
-
Integration of high-performance SiGe:C HBTs with thin-film SOI CMOS
-
H. Rucker, B. Heinemann, R. Barth, D. Bolze, J. Drews, O. Fursenko et al., Integration of high-performance SiGe:C HBTs with thin-film SOI CMOS, IEEE Proc. IEDM Tech. Dig. (2004), pp. 239-242.
-
(2004)
IEEE Proc. IEDM Tech. Dig
, pp. 239-242
-
-
Rucker, H.1
Heinemann, B.2
Barth, R.3
Bolze, D.4
Drews, J.5
Fursenko, O.6
-
4
-
-
0033098895
-
Characterization of the effectiveness of Carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's
-
I.M. Anteney, G. Lippert, P. Ashburn, H.J. Osten, B. Heinemann, G.J. Parker, D. Knoll, Characterization of the effectiveness of Carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's, IEEE ED Lett. 20(3), 116-118 (1999).
-
(1999)
IEEE ED Lett
, vol.20
, Issue.3
, pp. 116-118
-
-
Anteney, I.M.1
Lippert, G.2
Ashburn, P.3
Osten, H.J.4
Heinemann, B.5
Parker, G.J.6
Knoll, D.7
-
6
-
-
11844264832
-
y layers for heterojunction bipolar transistor applications
-
y layers for heterojunction bipolar transistor applications, Semicond. Sci. Technol. 20, 95-102 (2005).
-
(2005)
Semicond. Sci. Technol
, vol.20
, pp. 95-102
-
-
Mitrovic, I.Z.1
Buiu, O.2
Hall, S.3
Zhang, J.4
Wang, Y.5
Hemment, P.L.F.6
-
7
-
-
0037065014
-
y on Si(001) surface from disilane, germane, and methylsilane
-
y on Si(001) surface from disilane, germane, and methylsilane, Appl. Phys. Lett. 81, 3780-3782 (2002).
-
(2002)
Appl. Phys. Lett
, vol.81
, pp. 3780-3782
-
-
Price, R.W.1
Tok, E.S.2
Woods, N.J.3
Zhang, J.4
-
10
-
-
0035505511
-
Leakage current mechanisms in SiGe HBTs fabricated using selective and nonselective epitaxy
-
J.F.W. Schiz, A.C. Lamb, F. Cristiano, J. Bonar, P. Ashburn, S. Hall, P.L.F. Hemment, Leakage current mechanisms in SiGe HBTs fabricated using selective and nonselective epitaxy, IEEE Trans ED 48(11), 2492-9 (2001).
-
(2001)
IEEE Trans ED
, vol.48
, Issue.11
, pp. 2492-2499
-
-
Schiz, J.F.W.1
Lamb, A.C.2
Cristiano, F.3
Bonar, J.4
Ashburn, P.5
Hall, S.6
Hemment, P.L.F.7
-
11
-
-
0006662878
-
A novel compact model description of reverse-biased diode characteristics including tunnelling
-
G.A.M. Hurkx, H.C. De Graaff, W.J. Kloosterman, M.P.G. Knuvers, A novel compact model description of reverse-biased diode characteristics including tunnelling, Proc. ESSDERC (1990), pp. 49-52.
-
(1990)
Proc. ESSDERC
, pp. 49-52
-
-
Hurkx, G.A.M.1
De Graaff, H.C.2
Kloosterman, W.J.3
Knuvers, M.P.G.4
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