Growth dynamics of Si1-yCy and Si1-x-yGexCy on Si(001) surface from disilane, germane, and methylsilane

Applied Physics Letters

Volumn 81, Issue 20, 2002, Pages 3780-3782

  Price, R W ^a   Tok, E S ^a,b   Woods, N J ^a   Zhang, Jing ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION ELECTRON MICROSCOPY; LIGHT REFLECTION; OSCILLATIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TEMPERATURE PROGRAMMED DESORPTION; X RAY DIFFRACTION;

GROWTH DYNAMICS;

EPITAXIAL GROWTH;

EID: 0037065014     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1519734     Document Type: Article

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