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Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 257-260

Effect of carbon on the valence band offset of siL-x-yGexcy/siheterojunctions

(3) Chang, C L a St Amour, A a,b Sturm, J C a

a Princeton University (United States)

b INTEL CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARBON; ENERGY GAP; SINGLE CRYSTALS; VALENCE BANDS; BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS;

ADMITTANCE SPECTROSCOPIES; CAPACITANCE-VOLTAGE SPECTROSCOPY; EFFECT OF CARBONS; SI (100) SUBSTRATE; SPECTROSCOPY MEASUREMENTS; THERMAL; VALENCE-BAND OFFSET; VAPOUR DEPOSITION;

HETEROJUNCTIONS; INTEGRATED CIRCUIT MANUFACTURE;

ADMITTANCE SPECTROSCOPY; RAPID THERMAL CHEMICAL VAPOR DEPOSITION; VALENCE BAND OFFSET;

EID: 0030402060 PISSN: 01631918 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/IEDM.1996.553579 Document Type: Conference Paper

Times cited : (14)

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