Leakage current mechanisms in SiGe HBTs fabricated using selective and nonselective epitaxy

IEEE Transactions on Electron Devices

Volumn 48, Issue 11, 2001, Pages 2492-2499

  Schiz, J F W ^a   Lamb, Andrew C ^b   Cristiano, Fuccio ^c   Bonar, J M ^a   Ashburn, Peter ^a   Hall, Stephen ^b   Hemment, Peter L F ^d  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

^c CEMES CNRS   (France)

^d UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Epitaxial growth; Heterojunction bipolar transistor (HBT); Selective epitaxial growth; SiGe

Indexed keywords

DOPING (ADDITIVES); ELECTRIC PROPERTIES; EPITAXIAL GROWTH; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

NONSELECTIVE EPITAXY; SILICON GERMANIDE; TRAP ASSISTED TUNNELING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035505511     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.960373     Document Type: Article

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