Crystallization, stress, and stress-relieve due to nickel in amorphous silicon thin films

Journal of Applied Physics

Volumn 102, Issue 4, 2007, Pages

  Zanatta, A R ^a   Ferri, F A ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; COMPRESSIVE STRESS; CRYSTALLIZATION; RAMAN SCATTERING;

RAMAN SCATTERING SPECTROSCOPY; THERMAL ANNEALING;

THIN FILMS;

EID: 34548395856     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2770823     Document Type: Article

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