Direct measurement of electromigration-induced stress in interconnect structures

IEEE Transactions on Device and Materials Reliability

Volumn 7, Issue 2, 2007, Pages 356-362

  Wilson, Christopher J ^a,b   Horsfall, Alton B ^b   O'Neill, Anthony G ^a,b   Wright, Nicholas G ^a,b   Bull, Steve J ^b   Terry, Jonathan G ^c   Stevenson, J Tom M ^c   Walton, Anthony J ^a,c  

^a IEEE

^b NEWCASTLE UNIVERSITY   (United Kingdom)

^c UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

Backstress; Electromigration; Interconnect; Metallization; Microelectromechanical system (MEMS); Reliability; Stress; Stress gradient; Stress measurement; Stress sensor

Indexed keywords

ALUMINUM; ELECTROMIGRATION; MATHEMATICAL MODELS; MEMS; METALLIZING;

INTERCONNECT STRUCTURES; STRESS GRADIENT; STRESS SENSOR;

STRESS MEASUREMENT;

EID: 34548265077     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.901071     Document Type: Conference Paper

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