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Volumn 19, Issue 18, 2007, Pages 1380-1382

High-performance short-wavelength (∼760 nm) AlGaInAs quantum-dot lasers

Author keywords

AlGaInAs quantum dots (QDs); Distributed feedback (DFB) lasers; Epitaxial growth; Quantum dot (QD) lasers

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; EPITAXIAL GROWTH; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR LASERS;

EID: 34548259450     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.902925     Document Type: Article
Times cited : (11)

References (18)
  • 3
    • 27144462742 scopus 로고    scopus 로고
    • High-power quantum dot lasers with improved temperature stability of emission wavelength for uncooled pump sources
    • S. Deubert, R. Debusmann, J. P. Reithmaier, and A. Forchel, "High-power quantum dot lasers with improved temperature stability of emission wavelength for uncooled pump sources," Electron. Lett., vol. 41, pp. 1125-1127, 2005.
    • (2005) Electron. Lett , vol.41 , pp. 1125-1127
    • Deubert, S.1    Debusmann, R.2    Reithmaier, J.P.3    Forchel, A.4
  • 4
    • 33751543263 scopus 로고    scopus 로고
    • Rapid shifted excitation Raman difference spectroscopy with a distributed feedback diode laser emitting at 785 nm
    • M. Maiwald, G. Erbert, A. Klehr, H. D. Kronfeldt, H. Schmidt, B. Sumpf, and G. Trankle, "Rapid shifted excitation Raman difference spectroscopy with a distributed feedback diode laser emitting at 785 nm," Appl. Phys. B, Lasers Optics, vol. 85, pp. 509-512, 2006.
    • (2006) Appl. Phys. B, Lasers Optics , vol.85 , pp. 509-512
    • Maiwald, M.1    Erbert, G.2    Klehr, A.3    Kronfeldt, H.D.4    Schmidt, H.5    Sumpf, B.6    Trankle, G.7
  • 12
    • 0001048111 scopus 로고    scopus 로고
    • Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy
    • O. Baklenov, D. L. Huffaker, A. Anselm, D. G. Deppe, and B. G. Streetman, "Influence of Al content on formation of InAlGaAs quantum dots grown by molecular beam epitaxy," J. Appl. Phys., vol. 82, pp. 6362-6364, 1997.
    • (1997) J. Appl. Phys , vol.82 , pp. 6362-6364
    • Baklenov, O.1    Huffaker, D.L.2    Anselm, A.3    Deppe, D.G.4    Streetman, B.G.5
  • 16
    • 0029246657 scopus 로고
    • High-performance 770-nm AlGaAs-GaAsP tensile-strained quantum-well laser-diodes
    • Feb
    • F. Agahi, K. M. Lau, H. K. Choi, A. Baliga, and N. G. Anderson, "High-performance 770-nm AlGaAs-GaAsP tensile-strained quantum-well laser-diodes," IEEE Photon. Technol. Lett., vol. 7, no. 2, pp. 140--143, Feb. 1995.
    • (1995) IEEE Photon. Technol. Lett , vol.7 , Issue.2 , pp. 140-143
    • Agahi, F.1    Lau, K.M.2    Choi, H.K.3    Baliga, A.4    Anderson, N.G.5
  • 17
    • 0041289911 scopus 로고    scopus 로고
    • Experimental line parameters of the oxygen A band at 760 nm
    • L. R. Brown and C. Plymate, "Experimental line parameters of the oxygen A band at 760 nm," J. Molecular Spectroscopy, vol. 199, pp. 166-179, 2000.
    • (2000) J. Molecular Spectroscopy , vol.199 , pp. 166-179
    • Brown, L.R.1    Plymate, C.2
  • 18
    • 0033123788 scopus 로고    scopus 로고
    • Short-wave-length (0.7 μm < lambda < 0.78 μm) high-power InGaAsP-active diode lasers
    • May/Jun
    • L. J. Mawst, S. Rusli, A. Al-Muhanna, and J. K. Wade, "Short-wave-length (0.7 μm < lambda < 0.78 μm) high-power InGaAsP-active diode lasers," IEEE J. Sel. Topics Quantum Electron. vol. 5, no. 3, pp. 785-791, May/Jun. 1999.
    • (1999) IEEE J. Sel. Topics Quantum Electron , vol.5 , Issue.3 , pp. 785-791
    • Mawst, L.J.1    Rusli, S.2    Al-Muhanna, A.3    Wade, J.K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.