InP-GaInP quantum-dot lasers emitting between 690-750 nm

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 11, Issue 5, 2005, Pages 1035-1040

  Smowton, P M ^a   Lutti, J ^a   Lewis, G M ^a   Krysa, A B ^a   Roberts, J S ^a   Houston, P A ^a  

^a CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

(211)B substrates; Bimodal distribution; Device characterization; Gain spectrum; InP GaInP lasers; Material characterization; Narrow gain spectra; Quantum dot growth; Quantum dot lasers; Room temperature; Sample optimization; Spectral width

Indexed keywords

OPTIMIZATION; PHYSICAL PROPERTIES; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; THERMAL EFFECTS;

(211)B SUBSTRATES; BIMODAL DISTRIBUTION; DEVICE CHARACTERIZATION; GAIN SPECTRUM; INP-GAINP LASERS; MATERIAL CHARACTERIZATION; NARROW GAIN SPECTRA; QUANTUM DOT GROWTH; QUANTUM-DOT LASERS; SPECTRAL WIDTH;

SEMICONDUCTOR LASERS;

EID: 31644441766     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2005.853838     Document Type: Article

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