High-performance p-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions

IEEE Electron Device Letters

Volumn 24, Issue 2, 2003, Pages 102-104

  Lin, Horng Chih ^a   Wang, Meng Fan ^b   Hou, Fu Ju ^a   Lin, Hong Nien ^b   Lu, Chia Yu ^b   Liu, Jan Tsai ^a   Huang, Tiao Yuan ^a,b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Ambipolar; Schottky barrier; Silicon on insulator (SOI)

Indexed keywords

LEAKAGE CURRENTS; MOS DEVICES; PLATINUM COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY;

ELECTRICAL JUNCTIONS;

FIELD EFFECT TRANSISTORS;

EID: 0038394522     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.807717     Document Type: Article

References (7)

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