Oxidation and removal mechanisms during chemical-mechanical planarization

Wear

Volumn 263, Issue 7-12 SPEC. ISS., 2007, Pages 1477-1483

  Ng, D ^a   Kulkarni, M ^a   Johnson, J ^b   Zinovev, A ^b   Yang, D ^c   Liang, H ^a  

^a Texas AandM University   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c Bruker Corporation   (United States)

Author keywords

Abrasion; Chemical mechanical planarization (CMP); Friction; Passivation; Wear

Indexed keywords

ABRASION; ALUMINA; FRICTION; HYDROGEN PEROXIDE; NANOPARTICLES; SCANNING ELECTRON MICROSCOPY; SLURRIES; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL COMPOSITION; NANOINDENTATION TECHNIQUES;

CHEMICAL MECHANICAL POLISHING;

ABRASION; ALUMINA; CHEMICAL MECHANICAL POLISHING; FRICTION; HYDROGEN PEROXIDE; NANOPARTICLES; SCANNING ELECTRON MICROSCOPY; SLURRIES; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 34548029538     PISSN: 00431648     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.wear.2006.11.023     Document Type: Article

References (44)

1. Rabinowicz E. Polishing. Sci. Am. 218 (1968) 91-99
2. Bowden F.P., and Tabor D. The Friction and Lubrication of Solids (1958), Clarendon Press, Oxford
3. Ohmi T. Trends for future silicon technology. Jpn. J. Appl. Phys. Part 1 33 (1994) 6747-6755
4. Preston F.W. The theory and design of plate glass polishing machines. J. Soc. Glass Technol. 11 (1927) 214-256
5. Fischer T.E., and Mullins W.M. Chemical aspects of ceramic tribology. J. Phys. Chem. 96 (1992) 5690-5701
6. Tomizawa H., and Fischer T.E. Friction and wear of silicon nitride and silicon carbide in water: hydrodynamic lubrication at low sliding speed obtained by tribochemical wear. ASLE Trans. 30 (1986) 41-46
7. Fischer T.E., and Tomizawa H. Interaction of tribochemistry and microfracture in the friction and wear of silicon nitride. Wear 105 (1985) 29-45
8. Fischer T.E., Liang H., and Mullins W.M. Tribochemical lubricious oxides on silicon nitride, new directions in tribology. In: Pope L., Fehrenbacher L., and Winer W. (Eds). Mater. Res. Soc. Symp. Proc. 140 (1989) 339-344
9. Fischer T. Tribochemistry. Ann. Rev. Mater. Sci. 18 (1988) 303-308
10. Heinicke G. Tribochemistry (1984), Carl Hanser, Munchen
11. Dickinson J.T., Park N.S., Kim M.W., and Langford S.C. A SFM study of a tribochemical process: stress enhanced dissolution. Tribol. Lett. 3 (1997) 69-80
12. Hariadi R., Langford S.C., and Dickinson J.T. Controlling nanometer-scale crystal growth on a model biomaterial with a scanning force microscope. Langmuir 18 (2002) 7773-7776
13. Fischer T., and Sexton M. In: Lacombe P. (Ed). Physical Chemistry of the Solid State: Applications to Metals and Their Compounds (1984), Elsevier, Amsterdam 97-106
14. Martin J.M., Le Mogne Th., Grossiord C., and Palermo Th. Tribochemistry in the analytical UHV tribometer. Tribol. Lett. 3 (1997) 87-94
15. Martin J.M. Antiwear mechanisms of zinc dithiophosphate: a chemical hardness approach. Tribol. Lett. 6 (1999) 1-8
16. Varlot K., Martin J.M., Grossiord C., Vacher B., and Inoue K. A dual-analysis approach in tribochemistry: application to ZDDP/calcium borate additive interactions. Tribol. Lett. 6 (1999) 181-189
17. Rigney D.A., and Hammerberg J.E. Unlubricated sliding behavior of metals. MRS Bull. 23 (1998) 32-36
18. M.F. Chow, W.L. Guthrie, F.B. Kaufman, US Patent 4,702,792 (1987).
19. Yeh J.L., Hills G.W., Cochran W.T., Rana V.V., and Garcia A.M. Vacuum 38 (1988) 817
20. Kanta C., Cote W., Cronin J., Holland K., Lee P.I., and Wright T. Submicron wiring technology with tungsten and planarization. Proceedings of Fifth International IEEE VLSI Interconnection Conference (1988) 21-28
21. W. Jeffrey, L.D. David, W.L. Guthrie, J. Hopewell, F.B. Kaufman, W.J. Patrick, K.P. Rodbell, R.W. Pasco, A. Nenadic, US Patent 4,954,142 (1990).
22. Liang H., and Larsen-Basse J. Probable Mechanisms of Si CMP. MRS Spring Meeting Presentation (1999)
23. Li Y., Burstein G.T., and Hutchings I.M. Influence of environmental composition and electrochemical potential on the slurry erosion-corrosion of aluminum. Wear 181-183 (1995) 70-79
24. Li Y., Burstein G.T., and Hutchings I.M. Influence of corrosion on slurry erosion of aluminium. Wear 186-187 (1995) 515-524
25. Wang Y.L., Wu J., Liu C.W., Wang T.C., and Dun J. Material characteristics and chemical-mechanical polishing of aluminum alloy thin films. Thin Solid Films 332 (1998) 397-403
26. Kuo H.S., and Tsai W.T. Electrochemical behavior of aluminum during chemical mechanical polishing in phosphoric acid based slurry. J. Electrochem. Soc. 147 (2000) 149-154
27. Kaufman F.B., Thompson D.B., Broadie R.E., Jaso M.A., Guthrie W.L., Pearson D.J., and Small M.B. Chemical-mechanical polishing for fabricating patterned W metal features as chip interconnects. J. Electrochem. Soc. 138 (1991) 3460-3465
28. Kneer E.A., Raghunath C., Mathew V., Raghavan S., and Jeon J.S. Electrochemical measurements during the chemical mechanical polishing of tungsten thin film. J. Electrochem. Soc. 144 (1997) 3041-3049
29. Larsen-Basse J., and Liang H. Probable role of abrasion in chemo-mechanical polishing of tungsten. Wear 233-235 (1999) 647-654
30. Estragnat E., Tang G., Liang H., Jahanmir S., Pei P., and Martin J.M. Experimental investigation on mechanisms of silicon chemical mechanical polishing. J. Elec. Mater. 33 (2004) 334-339
31. Steigerwald J.M., Duquette D.J., Murarka S.P., and Gutmann R.J. Electrochemical potential measurements during chemical-mechanical polishing of copper thin films. J. Electrochem. Soc. 142 (1995) 2379-2385
32. Steigerwald J.M., Murarka S.P., Gutmann R.J., and Duquette D.J. Chemical processes in the chemical mechanical polishing of copper. Mater. Chem. Phys. 41 (1995) 217-228
33. Sainio C.A., Duquette D.J., Steigerwald J., and Murarka S.P. Electrochemical effects in the chemical-mechanical polishing of copper for integrated circuits. J. Elec. Mater. 25 (1996) 1593-1598
34. Li Y., Hariharaputhiram M., and Babu S.V. Chemical-mechanical polishing of copper and tantalum with silica abrasives. J. Mater. Res. 16 (2001) 1066-1073
35. Xu G.H., and Liang H. Effects of electric potential on chemical-mechanical polishing of copper. J. Elec. Mater. 31 (2002) 272-277
36. M. Kulkarni, D. Greisen, D. Ng, H. Liang, New approaches in investigation of removal mechanisms during copper chemical-mechanical polishing, J. ASTM Int., in press.
37. M. Kulkarni, Tribochemical interaction of microelectronics materials, Ph.D. Thesis, Dept. of Materials Science and Engineering, Texas A&M University, August 2006.
38. Sigmund P. Theory of sputtering. I. Sputtering yield of amorphous and polycrystalline targets. Phys. Rev. 184 (1969) 383-416
39. Good Fellow Inc. www.goodfellow.com last accessed on Feb. 1, 2007.
40. Liang H., Martin J.M., and Mogne T.L. Interfacial transfer between copper and polyurethane in chemical-mechanical polishing. J. Elec. Mater. 31 (2002) 872-878
41. Liang H., Martin J.M., and Lee R. Influence of oxides on friction during Cu CMP. J. Elec. Mater. 30 (2001) 391-395
42. Rauh M., Finzel H.U., and Wissmann P.Z. Naturforsch 54a (1999) 117
43. Archad J.F. Contact and rubbing of flat surfaces. J. Appl. Phys. 24 (1953) 981-985
44. Grillaert J., Meuris M., Heylen N., Devriendt K., Vrancken E., and Heyns M. Proc. CMP-MIC (1999) 79-86