Growth and properties of ZnO film grown on Si(111) substrate with AlN Buffer by MOCVD

Guangxue Xuebao/Acta Optica Sinica

Volumn 26, Issue 3, 2006, Pages 463-466

  Zheng, Changda ^a   Wang, Li ^a   Fang, Wenqing ^a   Pu, Yong ^a   Dai, Jiangnan ^a   Jiang, Fengyi ^a  

^a NANCHANG UNIVERSITY   (China)

Author keywords

Atmospheric pressure metal organic chemical vapor deposition; In situ monitor; Photoluminescence; Structure properties; Thin film optics; ZnO AlN Si film growth

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; FILM GROWTH; NITROGEN; PHOTOLUMINESCENCE; SILICON; TENSILE STRESS; THIN FILMS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

ATMOSPHERIC PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION; CRYSTALS LATTICE MISMATCH; FREE EXCITON EMISSION; IN SITU MONITOR; LONGITUDINAL OPTICAL PHONON; STRUCTURE PROPERTIES; THIN FILM OPTICS; ZNO/ALN/SI FILM GROWTH;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 33646584812     PISSN: 02532239     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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