Silicon delta-doping effect on photoluminescence from InGaN/GaN multi-quantum-well structures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 1, 2007, Pages 131-133

  Kim, Keunjoo ^a   Jeon, Kyoung Nam ^b  

^a Chonbuk National University   (South Korea)

^b AUK Corporation   (South Korea)

Author keywords

2DEG; Blue LED; Multi quantum well; Quantum tunneling

Indexed keywords

DOPING (ADDITIVES); ELECTRON TUNNELING; GALLIUM NITRIDE; LIGHT EMITTING DIODES; SEMICONDUCTING SILICON COMPOUNDS; TWO DIMENSIONAL ELECTRON GAS;

BLUE LED; MULTI-QUANTUM-WELLS; QUANTUM TUNNELING; ROOM TEMPERATURE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34547921683     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.131     Document Type: Article

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