Ta/Mo stack dual metal gate technology applicable to gate-first processes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 1825-1829

  Matsukawa, Takashi ^a   Liu, Yongxun ^a   Endo, Kazuhiko ^a   Masahara, Meishoku ^a   Ishii, Kenichi ^a   Yamauchi, Hiromi ^a   Tsukada, Junichi ^a   Suzuki, Eiichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

DG MOSFET; Dual metal; FD SOI; Interdiffusion; Metal gate; Mo; Ta; Work function

Indexed keywords

BAND STRUCTURE; DRAIN CURRENT; INTERDIFFUSION (SOLIDS); MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; THERMODYNAMIC STABILITY;

DOUBLE-GATE (DG) TRANSISTORS; GATE TECHNOLOGY; METAL GATES; WORK FUNCTIONS;

GATE DIELECTRICS;

EID: 34547917295     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.1825     Document Type: Article

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