Patterning of Ru electrode in O2/Cl2 gas using reactive ion etcher

Vacuum

Volumn 71, Issue 4, 2003, Pages 481-486

  Kim, Hyoun Woo ^a   Ju, Byong Sun ^b   Kang, Chang Jin ^b  

^a Inha University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Etching; Etching profile; RIE; Ru

Indexed keywords

PLASMAS; REACTIVE ION ETCHING; RUTHENIUM; SILICA;

GAS FLOW RATE;

ELECTRODES;

EID: 0038113340     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(03)00047-2     Document Type: Article

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