Low-threshold current density GalnAsP/InP quantum-wire distributed feedback lasers fabricated by low-damage processes

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 1-3, 2007, Pages

  Nishimoto, Yoshifumi ^a   Miura, Koji ^a   Yagi, Hideki ^a,b   Plumwongrot, Dhanorm ^a   Ohira, Kazuya ^a   Maruyama, Takeo ^a,b   Arai, Shigehisa ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

CH 4 H2 RIE; Distributed feedback laser; Low threshold current; Quantum wire laser; Wet chemical etching

Indexed keywords

BIAS CURRENTS; ELECTRON BEAM LITHOGRAPHY; REACTIVE ION ETCHING; SEMICONDUCTOR QUANTUM WIRES; THRESHOLD CURRENT DENSITY; VAPOR PHASE EPITAXY; WET ETCHING;

DIFFERENTIAL QUANTUM EFFICIENCY; LOW THRESHOLD CURRENT; QUANTUM WIRE LASER;

DISTRIBUTED FEEDBACK LASERS;

EID: 34547910658     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L34     Document Type: Article

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