Multiple-quantum-wire structures with good size uniformity fabricated by CH4/H2 dry etching and organometallic vapor-phase-epitaxial regrowth

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 6 A, 2003, Pages 3471-3472

  Sano, Takuya ^a   Yagi, Hideki ^a   Muranushi, Kengo ^a   Tamura, Shigeo ^a   Maruyama, Takeo ^a   Haque, Anisul ^a   Arai, Shigehisa ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

CH4 H2 RIE; EB lithography; GaInAsP InP; OMVPE regrowth; Quantum wire laser; Size distribution

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; METALLORGANIC VAPOR PHASE EPITAXY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS;

MULTIPLE QUANTUM WIRE STRUCTURES; ORGANOMETALLIC VAPOR-PHASE EPITAXIAL REGROWTH; QUANTUM-WIRE LASER;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0041880571     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.3471     Document Type: Article

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