Measurement of amount of pattern trim and surface chemistry for organic resist etching in an inductively coupled plasma in so2-O2 gas mixtures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 8 A, 2007, Pages 5297-5303

  Goto, Takeshi K ^a   Makabe, Toshiaki ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

Advanced process control (APC); CMOS logic chip; Critical dimension (CD); Gate fabrication; GEC reference cell; MOSFET; O 2; Photoresist; Plasma etching; SO2

Indexed keywords

CMOS INTEGRATED CIRCUITS; GAS MIXTURES; INDUCTIVELY COUPLED PLASMA; MOSFET DEVICES; PLASMA ETCHING;

ADVANCED PROCESS CONTROL (APC); CMOS LOGIC CHIP; CRITICAL DIMENSION (CD); GATE FABRICATION; GEC REFERENCE CELL;

SURFACE CHEMISTRY;

EID: 34547885035     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.5297     Document Type: Article

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