Characterization of resist-trimming processes by quasi in situ x-ray photoelectron spectroscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 1869-1879

  Pargon, E ^a   Joubert, O ^a   Xu, Songlin ^b,c   Lill, Thorsten ^b  

^a CEA LETI   (France)

^b APPLIED MATERIALS INC   (United States)

^c MATTSON THERMAL PRODUCTS GMBH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL-TOMOGRAPHY; REACTIVE LAYERS; RESIST PATTERNS; RESIST-TRIMMING PROCESS;

ADSORPTION; BROMINE COMPOUNDS; CHLORINE COMPOUNDS; CMOS INTEGRATED CIRCUITS; COMPOSITION; MOS DEVICES; PLASMAS; POLYSILICON; SCANNING ELECTRON MICROSCOPY; THICKNESS CONTROL; TRIMMING; X RAY PHOTOELECTRON SPECTROSCOPY;

PHOTORESISTS;

EID: 4944247450     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1767038     Document Type: Article

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