Argon and oxygen ion chemistry effects in photoresist etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 5, 2002, Pages 1901-1906

  Greer, Frank ^a   Van, L ^a   Fraser, D ^a   Coburn, J W ^a   Graves, David B ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; IONS; OXYGEN; PHOTORESISTS; PLASMA ETCHING; REACTION KINETICS; REACTIVE ION ETCHING; SPUTTERING; VACUUM APPLICATIONS;

ARGON ION; CHEMISTRY EFFECTS; GENERALIZED SITE BALANCE MODEL; HIGH VACUUM CHAMBER; OXYGEN ION; PHOTORESIST ETCHING; PHOTORESIST SPUTTER;

CHEMICAL ANALYSIS;

EID: 0036026353     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1501578     Document Type: Article

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