Microcrystalline/amorphous thin Si films deposition by a newly developed dual injection system employing hydrogen plasma and silicon radicals at low temperature (300°C) chemical vapor deposition process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2542-2553

  Takeda, Toru ^a   Tanaka, Kouji ^a   Inoue, Hirotada ^a   Hirayama, Masaki ^a   Tsumori, Toshirou ^a   Aharoni, Herzl ^a,b   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

Amorphous silicon; Low temperature deposition; Microcrystalline silicon; Microwave plasma

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; FILM GROWTH; MICROCRYSTALLINE SILICON;

HYDROGEN PLASMA; LOW TEMPERATURE DEPOSITION; MICROWAVE PLASMA; SILICON RADICALS;

THIN FILMS;

EID: 34547876198     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2542     Document Type: Article

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