Hillock-free heavily boron-doped homoepitaxial diamond films on misoriented (001) substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 A, 2007, Pages 1469-1470

  Tokuda, Norio ^a,b   Umezawa, Hitoshi ^a   Yamabe, Kikuo ^c   Okushi, Hideyo ^a,b   Yamasaki, Satoshi ^a,b,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Boron doping; Diamond; Homoepitaxy; Lateral growth; Surface

Indexed keywords

BORON; CONCENTRATION (PROCESS); ELECTRONIC EQUIPMENT; EPITAXIAL GROWTH; SEMICONDUCTOR DOPING;

BORON DOPING; HOMOEPITAXY; LATERAL GROWTH;

DIAMOND FILMS;

EID: 34547870581     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.1469     Document Type: Article

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