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Volumn 3, Issue 8, 2007, Pages 1356-1361

p-type α-Fe2O3 nanowires and their n-type transition in a reductive ambient

(10) Lee, Yu Chen a Chueh, Yu Lun a,b Hsieh, Chin Hua a Chang, Mu Tung a Chou, Li Jen a Wang, Zhong Lin b Lan, Yann Wen c Chen, Chii Dong c Kurata, Hiroki d Isoda, Seiji d

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b Georgia Institute of Technology (United States)

c INSTITUTE OF PHYSICS (Taiwan)

d KYOTO UNIVERSITY (Japan)

Author keywords

Conductivity; Iron; Nanowires; Oxides

Indexed keywords

ELECTRONIC PROPERTIES; IRON OXIDES; OXYGEN VACANCIES; PHASE TRANSITIONS; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL);

GAS SENSING; IRON OXIDE COMPOUND MATERIALS; PHOTOELECTRODES; REDUCTIVE AMBIENT;

NANOWIRES;

FERRIC ION; FERRIC OXIDE; NANOTUBE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; OXIDATION REDUCTION REACTION; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; FERRIC COMPOUNDS; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; OXIDATION-REDUCTION; PARTICLE SIZE; SEMICONDUCTORS; SURFACE PROPERTIES;

EID: 34547842095 PISSN: 16136810 EISSN: 16136829 Source Type: Journal
DOI: 10.1002/smll.200700004 Document Type: Article

Times cited : (117)

References (35)

1
- 33646172374
- a) T. H. Moon, M. C. Jeong, B. Y. Oh, M. H. Ham, M. H. Jeun, W. Y. Lee, J. M. Myoung, Nanotechnology 2006, 17, 2116;
- (2006) Nanotechnology , vol.17 , pp. 2116
- Moon, T.H.¹ Jeong, M.C.² Oh, B.Y.³ Ham, M.H.⁴ Jeun, M.H.⁵ Lee, W.Y.⁶ Myoung, J.M.⁷

2
- 33645810366
- b) Z. L. Wang, J. H. Song, Science 2006, 312, 242;
- (2006) Science , vol.312 , pp. 242
- Wang, Z.L.¹ Song, J.H.²

3
- 2342635734
- c) P. Nguyen, H. T. Ng, T. Yamada, M. K. Smith, J. Li, J. Han, M. Meyyappan, Nano Lett. 2004, 4, 651;
- (2004) Nano Lett , vol.4 , pp. 651
- Nguyen, P.¹ Ng, H.T.² Yamada, T.³ Smith, M.K.⁴ Li, J.⁵ Han, J.⁶ Meyyappan, M.⁷

4
- 28344435968
- d) Y. R. Ryu, T. S. Lee, J. A. Lubguban, H. W. White, Y. S. Park, C. J. Youn, Appl. Phys. Lett. 2005, 87, 153 504;
- (2005) Appl. Phys. Lett , vol.87 , pp. 153-504
- Ryu, Y.R.¹ Lee, T.S.² Lubguban, J.A.³ White, H.W.⁴ Park, Y.S.⁵ Youn, C.J.⁶

5
- 33644898897
- e) C. S. Lao, P. X. Gao, L. Zhang, D. Davidovic, R. Tummala, Z. L. Wang, Nano Lett. 2006, 6, 263;
- (2006) Nano Lett , vol.6 , pp. 263
- Lao, C.S.¹ Gao, P.X.² Zhang, L.³ Davidovic, D.⁴ Tummala, R.⁵ Wang, Z.L.⁶

6
- 33646858392
- f) A. Ponzoni, E. Comini, G. Sberveglieri, J. Zhou, S. Z. Deng, N. S. Xu, Y. Ding, Z. L. Wang, Appl. Phys. Lett. 2006, 88, 203 106.
- (2006) Appl. Phys. Lett , vol.88 , pp. 203-106
- Ponzoni, A.¹ Comini, E.² Sberveglieri, G.³ Zhou, J.⁴ Deng, S.Z.⁵ Xu, N.S.⁶ Ding, Y.⁷ Wang, Z.L.⁸

7
- 1242331522
- C. Ronning, P. X. Gao, Z. L. Wang, D. Schwen, Appl. Phys. Lett. 2004, 84, 783.
- (2004) Appl. Phys. Lett , vol.84 , pp. 783
- Ronning, C.¹ Gao, P.X.² Wang, Z.L.³ Schwen, D.⁴

8
- 33747458649
- A. Bielanski, J. Deren, J. Haber, Nature 1957, 179, 668.
- (1957) Nature , vol.179 , pp. 668
- Bielanski, A.¹ Deren, J.² Haber, J.³

9
- 7044223423
- a) B. W. Licznerski, K. Nitsch, H. Teterycz, K. Wisniewski, Sens. Actuators B 1992, 7, 626;
- (1992) Sens. Actuators B , vol.7 , pp. 626
- Licznerski, B.W.¹ Nitsch, K.² Teterycz, H.³ Wisniewski, K.⁴

10
- 0038787985
- b) A. K. Prasad, D. J. Kubinski, P. I. Gouma, Sens. Actuators B 2003, 93, 25;
- (2003) Sens. Actuators B , vol.93 , pp. 25
- Prasad, A.K.¹ Kubinski, D.J.² Gouma, P.I.³

11
- 1842631014
- c) G. Korotcenkov, V. Brinzari, V. Golovanov, A. Cerneavshi, V. Matolin, A. Todd, Appl. Surf. Sci. 2004, 227, 122.
- (2004) Appl. Surf. Sci , vol.227 , pp. 122
- Korotcenkov, G.¹ Brinzari, V.² Golovanov, V.³ Cerneavshi, A.⁴ Matolin, V.⁵ Todd, A.⁶

12
- 0001271672
- a) M. Catti, G. Valerio, Phys. Rev. B 1995, 51, 7441;
- (1995) Phys. Rev. B , vol.51 , pp. 7441
- Catti, M.¹ Valerio, G.²

13
- 16244395203
- b) J. Chen, L. Xu, W. Li, X. Gou, Adv. Mater. 2005, 17, 582.
- (2005) Adv. Mater , vol.17 , pp. 582
- Chen, J.¹ Xu, L.² Li, W.³ Gou, X.⁴

14
- 7044234799
- A. Gurlo, N. Bârsan, A. Oprea, M. Sahm, T. Sahm, U. Weimar, Appl. Phys. Lett. 2004, 85, 2280.
- (2004) Appl. Phys. Lett , vol.85 , pp. 2280
- Gurlo, A.¹ Bârsan, N.² Oprea, A.³ Sahm, M.⁴ Sahm, T.⁵ Weimar, U.⁶

15
- 32044473151
- a) S. Mathur, S. Barth, H. Shen, J. C. Pyun, U. Werner, Small 2005, 1, 713;
- (2005) Small , vol.1 , pp. 713
- Mathur, S.¹ Barth, S.² Shen, H.³ Pyun, J.C.⁴ Werner, U.⁵

16
- 17944375685
- b) Q. H. Li, T. Gao, Y. G. Wang, T. H. Wang, Appl. Phys. Lett. 2005, 86, 123 117;
- (2005) Appl. Phys. Lett , vol.86 , pp. 123-117
- Li, Q.H.¹ Gao, T.² Wang, Y.G.³ Wang, T.H.⁴

17
- 0037116538
- c) H. Kind, H. Yan, B. Messer, M. Law, P. D. Yang, Adv. Mater. 2002, 14, 158.
- (2002) Adv. Mater , vol.14 , pp. 158
- Kind, H.¹ Yan, H.² Messer, B.³ Law, M.⁴ Yang, P.D.⁵

18
- 33751066377
- Y. L. Chueh, M. W. Lai, J. Q. Liang, L. J. Chou, Z. L. Wang, Adv. Funct. Mater. 2006, 16, 2243.
- (2006) Adv. Funct. Mater , vol.16 , pp. 2243
- Chueh, Y.L.¹ Lai, M.W.² Liang, J.Q.³ Chou, L.J.⁴ Wang, Z.L.⁵

19
- 1942521243
- Z. Yu, D. A. Muller, J. Silcox, J. Appl. Phys. 2004, 95, 3362.
- (2004) J. Appl. Phys , vol.95 , pp. 3362
- Yu, Z.¹ Muller, D.A.² Silcox, J.³

20
- 0000945539
- a) J. E. Fischer, H. Dai, A. Thess, R. Lee, N. M. Hanjani, D. L. Dehaas, R. E. Smalley, Phys. Rev. B 1997, 55, 4921;
- (1997) Phys. Rev. B , vol.55 , pp. 4921
- Fischer, J.E.¹ Dai, H.² Thess, A.³ Lee, R.⁴ Hanjani, N.M.⁵ Dehaas, D.L.⁶ Smalley, R.E.⁷

21
- 0005836651
- b) R. Martel, T. Schmidt, H. R. Shea, T. Hertel, P. Avouris, Appl. Phys. Lett. 1998, 73, 2447;
- (1998) Appl. Phys. Lett , vol.73 , pp. 2447
- Martel, R.¹ Schmidt, T.² Shea, H.R.³ Hertel, T.⁴ Avouris, P.⁵

22
- 17044363770
- Z. Fan, D. Wang, P. C. Chang, W. Y. Tseng, J. G. Lu, Appl. Phys. Lett. 2004, 85, 5923.
- (2004) Appl. Phys. Lett , vol.85 , pp. 5923
- Fan, Z.¹ Wang, D.² Chang, P.C.³ Tseng, W.Y.⁴ Lu, J.G.⁵

23
- 0003675248
- Wiley, New York
- S. M. Sze, Modern Semiconductor Device Physics, Wiley, New York, 1998.
- (1998) Modern Semiconductor Device Physics
- Sze, S.M.¹

24
- 36149023305
- a) F. J. Morin, Phys. Rev. 1954, 93, 1195;
- (1954) Phys. Rev , vol.93 , pp. 1195
- Morin, F.J.¹

25
- 24144503749
- b) Z. Fan, X. Wen, S. Yang, J. G. Lu, Appl. Phys. Lett. 2005, 87, 013 113.
- (2005) Appl. Phys. Lett , vol.87 , pp. 013-113
- Fan, Z.¹ Wen, X.² Yang, S.³ Lu, J.G.⁴

26
- 35949012815
- C. Colliex, T. Manoubi, C. Ortiz, Phys. Rev. B 1991, 44, 11 402.
- (1991) Phys. Rev. B , vol.44 , pp. 11-402
- Colliex, C.¹ Manoubi, T.² Ortiz, C.³

27
- 0001641761
- H. Kurata, E. Lefèvre, C. Colliex, R. Brydson, Phys. Rev. B 1993, 47, 13 763.
- (1993) Phys. Rev. B , vol.47 , pp. 13-763
- Kurata, H.¹ Lefèvre, E.² Colliex, C.³ Brydson, R.⁴

28
- 0031168606
- Z. L. Wang, J. S. Yin, Y. D. Jiang, J. Zhang, Appl. Phys. Lett. 1997, 70, 3362.
- (1997) Appl. Phys. Lett , vol.70 , pp. 3362
- Wang, Z.L.¹ Yin, J.S.² Jiang, Y.D.³ Zhang, J.⁴

29
- 37049175741
- a) D. J. M. Bevan, J. P. Shelton, J. S. Anderson, J. Chem. Soc. 1948, 1729;
- (1948) J. Chem. Soc , pp. 1729
- Bevan, D.J.M.¹ Shelton, J.P.² Anderson, J.S.³

30
- 34547840530
- b) R. F. G. Gardner, F. Sweetand, D. W. Tanner, J. Phys. Chem. Solids 1963, 24, 1193.
- (1963) J. Phys. Chem. Solids , vol.24 , pp. 1193
- Gardner, R.F.G.¹ Sweetand, F.² Tanner, D.W.³

31
- 22944447168
- J. Jasinski, K. E. Pinkerton, I. M. Kennedy, V. J. Leppert, Sens. Actuators B 2005, 109, 19.
- (2005) Sens. Actuators B , vol.109 , pp. 19
- Jasinski, J.¹ Pinkerton, K.E.² Kennedy, I.M.³ Leppert, V.J.⁴

32
- 0003804235
- Plenum, New York
- S. R. Morrison, The Chemical Physics of Surfaces, Plenum, New York, 1990.
- (1990) The Chemical Physics of Surfaces
- Morrison, S.R.¹

33
- 0024067186
- K. Kobayash, G. Okada, J. Kumanotani, J. Mater. Sci. Lett. 1988, 7, 853.
- (1988) J. Mater. Sci. Lett , vol.7 , pp. 853
- Kobayash, K.¹ Okada, G.² Kumanotani, J.³

34
- 0040793964
- a) M. H. A. Elhamid, M. M. Khader, A. E. Mahgoub, B. E. E. Anadouli, B. G. Ateya, J. Solid State Chem. 1996, 123, 249;
- (1996) J. Solid State Chem , vol.123 , pp. 249
- Elhamid, M.H.A.¹ Khader, M.M.² Mahgoub, A.E.³ Anadouli, B.E.E.⁴ Ateya, B.G.⁵

35
- 0039220831
- b) P. K. Gallagher, E. M. Gyorgy, H. E. Bair, J. Chem. Phys. 1979, 71, 830.
- (1979) J. Chem. Phys , vol.71 , pp. 830
- Gallagher, P.K.¹ Gyorgy, E.M.² Bair, H.E.³

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