Controlled p- and n-type doping of Fe 2O 3 nanobelt field effect transistors

Applied Physics Letters

Volumn 87, Issue 1, 2005, Pages

  Fan, Zhiyong ^a   Wen, Xiaogang ^b   Yang, Shihe ^b   Lu, Jia G ^a  

^a University of California at Irvine   (United States)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL TRANSPORT; N-TYPE DOPING; NANOBELTS; P-TYPE DOPING;

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; IRON OXIDES; NANOSTRUCTURED MATERIALS; TRANSISTORS; ZINC;

FIELD EFFECT TRANSISTORS;

EID: 24144503749     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1977203     Document Type: Article

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