Fabrication of SrTiO3 field effect transistors with SrTiO 3-δ source and drain electrodes

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 20-24, 2007, Pages

  Sato, Taisuke ^a   Shibuya, Keisuke ^a,b   Ohnishi, Tsuyoshi ^a   Nishio, Kazunori ^a   Lippmaa, Mikk ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Argon ion milling; CaHfO3; Field effect transistor; Hafnate; Oxide electronics; Oxygen deficient SrTiO3; SrTiO3; Wide gap insulator

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRODES; OXYGEN VACANCIES; STRONTIUM COMPOUNDS;

ARGON ION MILLING; HAFNATE; OXIDE ELECTRONICS; WIDE-GAP INSULATOR;

FIELD EFFECT TRANSISTORS;

EID: 34547838411     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L515     Document Type: Article

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