Fabrication of field-effect transistor device with higher fullerene, C88

Applied Physics Letters

Volumn 87, Issue 2, 2005, Pages

  Nagano, Takayuki ^a,b   Sugiyama, Hiroyuki ^a,b   Kuwahara, Eiji ^a,b   Watanabe, Rie ^a,b   Kusai, Haruka ^a,b   Kashino, Yoko ^a,b   Kubozono, Yoshihiro ^a,b  

^a OKAYAMA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSPORT; HOPPING; THERMAL ACTIVATION;

CARRIER CONCENTRATION; FULLERENES; THERMAL EFFECTS; THIN FILMS;

FIELD EFFECT TRANSISTORS;

EID: 24144460000     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1994957     Document Type: Article

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