Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 3012-3016

  Chen, Y ^a,b   Macintyre, D S ^a   Cao, X ^a   Boyd, E ^a   Moran, D ^a   McLelland, H ^a   Holland, M ^a   Stanley, C R ^a   Thayne, I ^a   Thoms, S ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACETONE; ALUMINUM; CHEMICAL ATTACK; DISSOLUTION; ELECTRON BEAM LITHOGRAPHY; ELECTRON SCATTERING; EPITAXIAL GROWTH; EVAPORATION; HIGH ELECTRON MOBILITY TRANSISTORS; METALLIZING; MOLECULAR WEIGHT; ORGANIC SOLVENTS; POLYIMIDES; POLYMETHYL METHACRYLATES; SPIN COATING; SURFACE CLEANING;

LIFT-OFF RESISTS (LOR); METAL EVAPORATION;

GATES (TRANSISTOR);

EID: 2542420082     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1629292     Document Type: Conference Paper

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