InGaAsSb/InP double heterojunction bipolar transistors grown by solid-source molecular beam epitaxy

IEEE Electron Device Letters

Volumn 28, Issue 8, 2007, Pages 679-681

  Chen, Shu Han ^a   Wang, Sheng Yu ^a   Hsieh, Rei Jay ^a   Chyi, Jen Inn ^a,b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

Author keywords

Heterojunction bipolar transistors (HBTs); InP InGaAsSb; Molecular beam epitaxy (MBE)

Indexed keywords

CARRIER TRANSPORT; CURRENT DENSITY; ELECTRIC POTENTIAL; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR (DHBT); SOLID-SOURCE MOLECULAR BEAM EPITAXY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 34547776275     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.901874     Document Type: Article

References (13)

1. 0.49/InP double heterojunction bipolar transistors with a staggered lineup base-collector junction," IEEE Electron Device Lett., vol. 20, no. 4, pp. 155-157, Apr. 1999.
2. CEO," IEEE Trans. Electron Devices, vol. 53, no. 3, pp. 559-561, Mar. 2006.
3. Y. Oda, K. Kurishima, N. Watanabe, M. Uchida, and T. Kobayashi, "High-current-gain InAlP/AlGaAsSb/InP HBTs with a compositionally-graded AlGaAsSb base grown by MOCVD," in Proc. Int. Conf. Indium Phosphide and Related Mater., May 2006, pp. 92-93.
4. C. R. Bolognesi, M. W. Dvorak, O. Pitts, S. P. Watkins, and T. W. MacElwee, "Investigation of high-current effects in staggered lineup InP/GaAsSb/InP heterostructure bipolar transistors: Temperature characterization and comparison to conventional Type - I HBTs and DHBTs," in IEDM Tech. Dig., 2001, pp. 768-771.
5. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, "Band parameters for III-V compound semiconductors and their alloys," J. Appl. Phys., vol. 89, no. 11, pp. 5815-5875, Jun. 2001.
6. S. R. Forrest, P. H. Schmidt, R. B. Wilson, and M. L. Kaplan, "Relationship between the conduction-band discontinuities and band-gap differences of InGaAsP/InP heterojunctions," Appl. Phys. Lett., vol. 45, no. 11, pp. 1199-1202, Dec. 1984.
7. M. S. Hybertsen, "Band offset transitivity at the InGaAs/InAlAs/InP (001) heterointerfaces," Appl. Phys. Lett., vol. 58, no. 16, pp. 1759-1762, Apr. 1991.
8. J. Hu, X. G. Xu, J. A. H. Stotz, S. P. Watkins, A. E. Curzon, M. L. W. Thewalt, N. Matine, and C. R. Bolognesi, "Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy," Appl. Phys. Lett., vol. 73, no. 19, pp. 2799-2801, Nov. 1998.
9. M. Peter, N. Herres, F. Fuchs, K. Winkler, K.-H. Bachem, and J. Wagner, "Band gaps and band offsets in strained GaAsSb on InP grown by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 74, no. 3, pp. 410-412, Jan. 1999.
10. C. R. Bolognesi, M. W. Dvorak, P. Yeo, X. G. Xu, and S. P. Watkins, "InP/GaAsSb/InP double HBTs: A new alternative for InP-based DHBTs," IEEE Trans. Electron Devices, vol. 48, no. 11, pp. 2631-2639, Nov. 2001.
11. W. Liu, Fundamentals of III-V Devices: HBTs, MESFETs and HFETs/HEMTs New York: Wiley, 1999.
12. T = 500 GHz grown by gas-source molecular beam epitaxy," in Proc. Int. Conf. Indium Phosphide and Related Mater., May 2006, pp. 89-91.
13. CEO ≥ 6 V," IEEE Electron Device Lett., vol. 22, no. 8, pp. 361-363, Aug. 2001.