Ultra-high speed composition graded InGaAsSb/GaAsSb DHBTs with f T = 500 GHz grown by gas-source molecular beam epitaxy

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2006, Issue , 2006, Pages 89-91

  Wu, Bing Ruey ^b   Snodgrass, William ^b   Hafez, Walid ^b   Feng, Milton ^a,b   Cheng, K Y ^a,b  

^a IEEE   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

Heterojunction bipolar transistors (HBTs); Molecular beam epitaxy (MBE)

Indexed keywords

CURRENT GAIN FREQUENCY; ELECTRON TRANSIT TIME; ULTRA HIGH SPEED COMPOSITION;

ELECTRON TRANSITIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33847102204     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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