High-current-gain InAlP/AlGaAsSb/InP HBTs with a compositionally-graded AlGaAsSb base grown by MOCVD

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2006, Issue , 2006, Pages 92-95

  Oda, Yasuhiro ^a   Kurishima, Kenji ^a   Watanabe, Noriyuki ^a   Uchida, Masahiro ^b   Kobayashi, Takashi ^a  

^a NTT CORPORATION   (Japan)

^b NTT Advance Technology Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DOPING (ADDITIVES); ELECTRIC CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS;

COMPOSITIONALLY GRADED STRUCTURES; CURRENT GAIN; MINORITY CARRIERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33847162740     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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