Investigation of high-current effects in staggered lineup InP/GaAsSb/InP heterostructure bipolar transistors: Temperature characterization and comparison to conventional type-I HBTs and DHBTs

Technical Digest-International Electron Devices Meeting

Volumn , Issue , 2001, Pages 768-771

  Bolognesi, C R ^a   Dvorak, M W ^a   Pitts, O ^a   Watkins, S P ^a   MacElwee, T W ^b  

^a SIMON FRASER UNIVERSITY   (Canada)

^b NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FREQUENCIES; INTERFACES (MATERIALS); QUANTUM THEORY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; TEMPERATURE;

CONDUCTION BAND; CUT OFF FREQUENCIES; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR; SINGLE HETEROJUNCTION BIPOLAR TRANSISTOR; TEMPERATURE CHARACTERIZATION; VALENCE BAND;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035718244     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2001.979628     Document Type: Article

References (7)

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