Enhanced performances of InGaN-based light-emitting diode by a micro-roughened p-GaN surface using metal clusters

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4776, Issue , 2002, Pages 114-121

  Huh, Chul ^a   Lee, Kug Seung ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

InGaN GaN multiple quantum well; Light output power; Light emitting diode; Micro roughened surface; Scattering

Indexed keywords

ELECTRIC CONTACTS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT SCATTERING; MASKS; PHOTONS; QUANTUM EFFICIENCY; REFRACTIVE INDEX; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS;

CURRENT INJECTION; INDIUM GALLIUM NITRIDE; LIGHT OUTPUT POWER; MICRO-ROUGHENED SURFACE;

LIGHT EMITTING DIODES;

EID: 0036986746     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.452565     Document Type: Conference Paper

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