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Volumn 22, Issue 13, 1999, Pages 79-90

New materials enhance memory performance

(1)  Baliga, John a  

a NONE

Author keywords

[No Author keywords available]

Indexed keywords


EID: 33746004880     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (1)

References (6)
  • 1
    • 0030285572 scopus 로고    scopus 로고
    • High-K Dielectric Materi-als for DRAM Capacitors
    • November
    • D. E. Kotecki, High-K Dielectric Materi-als for DRAM Capacitors, Semiconductor International, November 1996, pp. 109-116.
    • (1996) Semiconductor International , pp. 109-116
    • Kotecki, D.E.1
  • 2
    • 6744227924 scopus 로고    scopus 로고
    • Atomic Layer Deposition Targets Thin Films
    • September
    • P. Singer, "Atomic Layer Deposition Targets Thin Films," Semiconductor International, September 1999, p. 40.
    • (1999) Semiconductor International , pp. 40
    • Singer, P.1
  • 4
    • 0004192371 scopus 로고    scopus 로고
    • Dover Publications, 1993, and references cited therein
    • F. Jona and G. Shirane, Ferroelectric Crystals, Dover Publications, 1993, and references cited therein.
    • Ferroelectric Crystals
    • Jona, F.1    Shirane, G.2
  • 5
    • 33746025450 scopus 로고    scopus 로고
    • National Technology Roadmap for Semiconductors, SIA1997
    • National Technology Roadmap for Semiconductors, SIA1997.
  • 6
    • 6744245528 scopus 로고    scopus 로고
    • GMR Read-Write Heads Yield Data Storage Record
    • February
    • J. Baliga, "GMR Read-Write Heads Yield Data Storage Record," Semiconductor International, February 1998, p. 38.
    • (1998) Semiconductor International , pp. 38
    • Baliga, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.