Investigation into patterning of a stack-type Ru electrode capacitor

Microelectronic Engineering

Volumn 69, Issue 1, 2003, Pages 89-96

  Kim, Hyoun Woo ^a   Kang, Chang Jin ^b  

^a Inha University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Etching; Ru; Scanning electron microscopy; SiO2 mask

Indexed keywords

CAPACITORS; ETCHING; SCANNING ELECTRON MICROSCOPY; SILICA;

ETCH RATES;

RUTHENIUM;

EID: 0038035204     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00275-2     Document Type: Article

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