Growth behavior of copper metalorganic chemical vapor deposition using the (hfac)Cu(VTMOS) precursor on titanium nitride substrates

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 14, Issue 6, 1996, Pages 3214-3219

  Jun, Chi Hoon ^a   Kim, Youn Tae ^a   Baek, Jong Tae ^a   Yoo, Hyung Joun ^a   Kim, Dai Ryong ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006696802     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580215     Document Type: Article

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