Silicon spin diffusion transistor: Materials, physics and device characteristics

IEE Proceedings: Circuits, Devices and Systems

Volumn 152, Issue 4, 2005, Pages 340-354

  Dennis, C L ^a   Tiusan, C V ^b   Gregg, J F ^a   Ensell, G J ^c   Thompson, S M ^d  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b INSTITUT JEAN LAMOUR   (France)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^d UNIVERSITY OF YORK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; MAGNETORESISTANCE; SEMICONDUCTOR MATERIALS; SILICON;

SEMICONDUCTOR FABRICATION; SPIN DIFFUSION TRANSISTOR; SPIN INJECTION; THREE-TERMINAL DEVICES;

TRANSISTORS;

EID: 25844504176     PISSN: 13502409     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-cds:20050008     Document Type: Conference Paper

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