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Volumn 290, Issue 1, 2006, Pages 91-95

Growth of epitaxial γ-Al2O3(1 1 1) films with smooth surfaces on chemically oxidized Si(1 1 1) substrates using an Al-N 2O mixed source molecular beam epitaxy

(4) Okada, Takayuki a Ito, Mikinori a Sawada, Kazuaki a Ishida, Makoto a

a TOYOHASHI UNIVERSITY OF TECHNOLOGY (Japan)

Author keywords

A1. Chemical oxide; A3. Molecular beam epitaxy; B1. Epitaxial Al 2O3; B3. Ultra large scale integrated circuit

Indexed keywords

CLEANING; GAMMA RAYS; MOLECULAR BEAM EPITAXY; SUBSTRATES; THIN FILMS;

CHEMICAL OXIDE; EPITAXIAL Γ-AL 2O3; INTEGRATED CIRCUIT APPLICATIONS; ULTRA-LARGE-SCALE INTEGRATED CIRCUIT;

CRYSTAL GROWTH;

EID: 33645038072 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.12.079 Document Type: Article

Times cited : (14)

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