Fabrication of crystalline HfO2 high-κ dielectric films deposited on crystalline γ-Al2O3 films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2320-2322

  Okada, Takayuki ^a   Shahjahan, Mohammad ^b   Sawada, Kazuaki ^a   Ishida, Makoto ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF RAJSHAHI   (Bangladesh)

Author keywords

Crystalline Al2O3; Crystalline HfO 2; Gate stack; High ; Molecular beam epitaxy

Indexed keywords

ALUMINA; AMORPHOUS MATERIALS; CRYSTALLINE MATERIALS; CRYSTALLIZATION; DEGRADATION; DEPOSITION; HAFNIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SILICON;

CRYSTALLINE Γ-AL2O3; CRYSTALLINE HFO2; GATE DIELECTRICS; HIGH-Κ GATE STACK;

DIELECTRIC FILMS;

EID: 21244496770     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2320     Document Type: Conference Paper

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