Crystal growth of SrTiO3 films on H-terminated Si(1 1 1) with SrO buffer layers

Surface Science

Volumn 600, Issue 3, 2006, Pages 724-728

  MacHida, Y ^a,b   Asaoka, H ^a   Yamamoto, H ^a   Shamoto, S ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b Vieetech Japan Co Ltd   (Japan)

Author keywords

Epitaxy; Growth; Molecular beam epitaxy; Oxygen; Reflection high energy electron diffraction; Silicon; Titanium

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OXYGEN; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON COMPOUNDS; STRONTIUM COMPOUNDS; TEMPERATURE DISTRIBUTION; THIN FILMS; TITANIUM;

GROWTH; SI SUBSTRATES;

CRYSTAL GROWTH;

EID: 31644440709     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.11.024     Document Type: Article

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