Characterization of silicon nanocrystals embedded in thin oxide layers by TOF-SIMS

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 813-816

  Perego, M ^a   Ferrari, S ^a   Fanciulli, M ^a   Assayag, G Ben ^b   Bonafos, C ^b   Carrada, M ^b   Claverie, A ^b  

^a LABORATORIO MDM   (Italy)

^b CEMES CNRS   (France)

Author keywords

Depth profile; Silicon nanocrystals; TOF SIMS

Indexed keywords

ANNEALING; ELECTRON TUNNELING; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; NEGATIVE IONS; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SILICA; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPTH PROFILES; NANOCLUSTERS; SILICON NANOCRYSTALS; TOF-SIMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 2942565883     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.124     Document Type: Conference Paper

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